RESEARCH ARTICLE


Simulation Studies on Semiconductor Photonic Crystal Using Photonic Bandgap Analysis: A Realization of Optical Mirror



C. Nayak1, P. Sarkar2, G. Palai3, *
1 Gharada Institute of Technology(GIT), Khed, Maharastra, 415708, India
2 Biju Patnaik University of Technology (BPUT), Rourkela, India
3 Gandhi Institute for Technological Advancement (GITA), Bhubaneswar, PIN-752054, India


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© Nayak et al.; Licensee Bentham Open

open-access license: This is an open access article licensed under the terms of the Creative Commons Attribution-Non-Commercial 4.0 International Public License (CC BY-NC 4.0) (https://creativecommons.org/licenses/by-nc/4.0/legalcode), which permits unrestricted, non-commercial use, distribution and reproduction in any medium, provided the work is properly cited.

* Address correspondence to this author at the Gandhi Institute for Technological Advancement (GITA), Janla, Bhubaneswar, PIN-752054, India; Tel: +91 9439045946; E-mail:gpalai28@gmail.com


Abstract

In this research, we attempt to envisage the mirror application using semiconductor photonic crystal with the help of photonic bandgap analysis. The photonic bandgap of photonic crystal structure is simulated using plane wave expansion method, where photonic crystal is realized by 2D triangular photonic crystal structure with gallium arsenide as background material having periodic air holes. Simulation result revealed that both lattice spacing of crystal structure and radius of air holes play vital role in realizing optical mirror. It is observed that photonic band gap of the above structure is found, if radius of air hole varies from 16 nm to 50 nm for lattice constant of 100 nm . It is also seen that photonic band gap is found if lattice spacing varies from 200 nm to 650 nm for radius of air hole of 100 nm.

Keywords: Triangular photonic crystal, Photonic bandgap, Optical mirror, Gallium arsenide semiconductor, Wavelength band, Plane wave expansion.